AOK20B65M1/aot20b65m1/aob20b65m1 650v, 20a alpha igbt tm with soft and fast recovery anti-parallel diode general description product summary v ce i c (t c =100c) 20a v ce(sat) (t j =25c) 1.7v applications ? latest alpha igbt ( igbt) technology ? 650v breakdown voltage ? very fast and soft recovery freewheeling diode ? high efficient turn-on di/dt controllability ? low v ce(sat) enables high efficiencies ? low turn-off switching loss and softness ? very good emi behavior ? high short-circuit ruggedness 650v ? motor drives ? sewing machines ? home appliances ? fan, pumps, vacuum cleaner ? other hard switching applications g c e g c e to-220 to-247 c e to-263 d 2 pak c e g symbol v ce v ge i cm i lm diode pulsed current, limited by t jmax i fm t sc t j , t stg t l symbol r q ja r q jc r q jc 1) allowed number of short circuits: <1000; time be tween short circuits: >1s. maximum junction-to-ambient 5 m s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds AOK20B65M1 to247 tube 240 parameter a 60 aob20b65m1 to263 tape & reel 800 to220 tube 1000 c/w 1.5 300 -55 to 175 227 c/w 114 c AOK20B65M1 aot(b)20b65m1 40 65 60 w units a 60 thermal characteristics c power dissipation p d short circuit withstanding time 1) v ge =15v, v cc 400v, t j 175c junction and storage temperature range t c =25c maximum diode junction-to-case c/w 0.66 maximum igbt junction-to-case v units parameter absolute maximum ratings t a =25c unless otherwise noted AOK20B65M1/aot(b)20b65m1 collector-emitter voltage 650 orderable part number aot20b65m1 va i c turn off soa, v ce 650v, limited by t jmax pulsed collector current, limited by t jmax gate-emitter voltage t c =100c a minimum order quantity package type form continuous diode forward current t c =25c i f 40 a t c =100c continuous collector current t c =25c 20 40 20 30 e aot20b65m1 g c AOK20B65M1 g aob20b65m1 rev.3.0: may 2016 www.aosmd.com page 1 of 9
symbol min typ max units bv ces collector-emitter breakdown voltage 650 - - v t j =25c - 1.7 2.15 t j =125c - 2.02 - t j =175c - 2.2 - t j =25c - 1.66 2.1 t j =125c - 1.67 - t j =175c - 1.62 - v ge(th) gate-emitter threshold voltage - 5.1 - v t j =25c - - 10 t j =125c - - 500 t j =175c - - 5000 i ges gate-emitter leakage current - - 100 na g fs - 14 - s c ies - 1212 - pf c oes - 141 - pf c res - 50 - pf q g - 46 - nc q ge - 12 - nc q gc - 21 - nc i c(sc) - 115 - a r g - 13 - w t d(on) - 26 - ns t r - 25 - ns t d(off) - 122 - ns t f - 13 - ns e on - 0.47 - mj e off - 0.27 - mj e total - 0.74 - mj t rr - 322 - ns q rr - 0.8 - m c i rm - 5.2 - a t d(on) - 27 - ns t r - 24 - ns t d(off) - 150 - ns t f - 28 - ns e on - 0.52 - mj e off - 0.49 - mj e total - 1.01 - mj t rr - 494 - ns q rr - 1.6 - m c i rm - 7.1 - a applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without notice. collector-emitter saturation voltageoutput capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters m a v ce =5v, i c =1ma electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v cc =25v, f=1mhz v ce =20v, i c =20a v ce =0v, v ge =30v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =20a v v ce =650v, v ge =0v v ge =0v, i f =20a v gate to collector charge gate to emitter charge v ge =15v, v cc =520v, i c =20a switching parameters, (load inductive, t j =25c) short circuit collector current v ge =15v, v cc =400v, t sc 5us, t j 175c total gate charge gate resistance v ge =0v, v cc =0v, f=1mhz turn-off energy turn-on rise time turn-on delaytime switching parameters, (load inductive, t j =175c) diode reverse recovery timediode reverse recovery charge diode peak reverse recovery current t j =25c i f =20a, di/dt=200a/ m s, v cc =400v turn-off delay time t j =25c v ge =15v, v cc =400v, i c =20a, r g =15 w total switching energy turn-off fall timeturn-on energy t j =175c i f =20a, di/dt=200a/ m s, v cc =400v diode reverse recovery chargediode peak reverse recovery current turn-on delaytime t j =175c v ge =15v, v cc =400v, i c =20a, r g =15 w turn-on rise timeturn-off delay time turn-off fall time turn-on energy diode reverse recovery time turn-off energytotal switching energy rev.3.0: may 2016 www.aosmd.com page 2 of 9
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 i f (a) v (v) 25 c 175 c -40 c 0 15 30 45 60 75 90 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 1: output characteristic (t j =25c) 9 v 20v 17v 15v 11v v ge = 7v 13v 0 10 20 30 40 50 3 6 9 12 15 i c (a) v ge (v) 175 c 25 c -40 c v ce =20v 0 15 30 45 60 75 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 2: output characteristic (t j =175c) v ge =7v 9 v 20v 17v 15v 11v 13v v f (v) figure 4: diode characteristic v ge (v) figure 3: transfer characteristic 0 1 2 3 4 5 0 25 50 75 100 125 150 175 v ce(sat) (v) temperature (c) figure 5: collector-emitter saturation voltage vs. junction temperature i c =40a i c =10a i c =20a 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 v f (v) temperature (c) figure 6: diode forward voltage vs. junction temperature 40a 20a 5a if=1a rev.3.0: may 2016 www.aosmd.com page 3 of 9
typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 v ge (v) q g (nc) figure 7: gate-charge characteristics v ce =520v i c =20a 0 60 120 180 240 300 25 50 75 100 125 150 175 power disspation (w) t ( c) 1 10 100 1000 10000 0 8 16 24 32 40 capacitance (pf) v ce (v) figure 8: capacitance characteristic c ies c res c oes t case ( c) figure 10: power disspation as a function of case 0 10 20 30 40 50 25 50 75 100 125 150 175 current rating i c (a) t case (c) figure 11: current de-rating 1e-08 1e-07 1e-06 1e-05 1e-04 1e-03 1e-02 0 25 50 75 100 125 150 175 i ce(s) (a) temperature (c) figure 12: diode reverse leakage current vs. junction temperature v ce =650v v ce =520v rev.3.0: may 2016 www.aosmd.com page 4 of 9
typical electrical and thermal characteristics 1 10 100 1000 10000 10 15 20 25 30 35 40 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =175c, v ge =15v, v ce =400v, r g =15 w ) td(off) tf td(on) tr 1 10 100 1000 10000 0 30 60 90 120 150 switching time (ns) r g ( w ) figure 14: switching time vs. r g (t j =175c, v ge =15v, v ce =400v, i c =20a) td(off) tf td(on) tr 1 10 100 1000 10000 switching time (ns) td(off) tf td(on) tr 1 2 3 4 5 6 7 v ge(th) (v) 25 50 75 100 125 150 175 t j (c) figure 15: switching time vs.t j (v ge =15v, v ce =400v, i c =20a, r g =15 w ) 0 25 50 75 100 125 150 175 t j (c) figure 16: v ge(th) vs. t j rev.3.0: may 2016 www.aosmd.com page 5 of 9
typical electrical and thermal characteristics 0 0.5 1 1.5 2 2.5 3 10 15 20 25 30 35 40 switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =175c, v ge =15v, v ce =400v, r g =15 w ) eoff eon etotal 0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150 switching energy (mj) r g ( w ) figure 18: switching loss vs. r g (t j =175c, v ge =15v, v ce =400v, i c =20a) eoff eon etotal 0.3 0.6 0.9 1.2 1.5 switching energy (mj) eoff eon etotal 0.3 0.6 0.9 1.2 1.5 switching energy (mj) eoff eon etotal 0 25 50 75 100 125 150 175 t j (c) figure 19: switching loss vs. t j (v ge =15v, v ce =400v, i c =20a, r g =15 w ) 0 200 250 300 350 400 450 500 v ce (v) figure 20: switching loss vs. v ce (t j =175c, v ge =15v, i c =20a, r g =15 w ) rev.3.0: may 2016 www.aosmd.com page 6 of 9
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 120 240 360 480 600 10 15 20 25 30 35 40 s t rr (ns) i f (a) figure 22: diode reverse recovery time and softness factor vs. conduction current (v ge =15v, v ce =400v, di/dt=200a/ m s) 175 c 25 c 175 c 25 c t rr s 0 8 16 24 32 40 0 500 1000 1500 2000 2500 10 15 20 25 30 35 40 i rm (a) q rr (nc) i f (a) figure 21: diode reverse recovery charge and peak current vs. conduction current (v ge =15v, v ce =400v, di/dt=200a/ m s) 25 c 175 c 175 c 25 c q rr i rm 5 10 15 20 25 30 120 240 360 480 600 s t rr (ns) 25 c 175 c 25 c 175 c t rr s 8 16 24 32 40 400 800 1200 1600 2000 i rm (a) q rr (nc) 175 c 25 c 175 c 25 c q rr i rm 0 0 200 300 400 500 600 700 800 di/dt (a/ m s) figure 24: diode reverse recovery time and softness factor vs. di/dt (v ge =15v, v ce =400v, i f =20a) 0 0 200 300 400 500 600 700 800 di/dt (a/ m s) figure 23: diode reverse recovery charge and peak current vs. di/dt (v ge =15v, v ce =400v, i f =20a) rev.3.0: may 2016 www.aosmd.com page 7 of 9
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 25: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.66 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm pulse width (s) figure 26: normalized maximum transient thermal imp edance for diode rev.3.0: may 2016 www.aosmd.com page 8 of 9
figure a: gate charge test circuit & waveforms figure b: inductive switching test circuit & waveforms figure c: diode recovery test circuit & waveforms rev.3.0: may 2016 www.aosmd.com page 9 of 9
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